paper 150304071626

Abstract

Nowadays demand for efficiency and high density of electronic device is high. Therefore, great emphasis is placed on the properties of electronic components such as diodes, transistors, transformers and more. Hence the scientific discipline was created Figure of Merit (FOM) which is dealing with this issue. The proposed article deals about the analysis of FOM of several power MOSFETs, whereby main parameters are taken into consideration for calculation purposes. In order to verify faithfulness of FOM the experimental measurements for determination of switching as well as conduction losses of selected transistors are performed. Because experimental analysis represents time-consuming process for evaluation of transistor switching performance, the various FOM methodologies are being described taking into account main parameters for the FOM evaluation (transistor para- sites, gate charge, switching frequency, parameters of target application, e.g., voltage — current ratings). Comparisons between the amount of transistor’s losses and its FOM indicator are provided.

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Michal Frivaldsky

Boris Kozacek

Marek Piri

Pavol Spanik