paper 150204070310

Published: 2015-07-09

Metamaterial Terahertz Bandpass Filters: A Comparison between Metallic and Graphene-based Structures

Hamed Baghban,

Hamed Baghban

University of Tabriz, Iran

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M. Bana Kermani,

M. Bana Kermani

University of Tabriz, Iran

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M. Khodaee,

M. Khodaee

University of Tabriz, Iran

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Amin Nasiri

University College of NabiAkram, Iran

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Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)1472-1474

Abstract

Metamaterial-based optoelectronic devices including Terahertz filters play a defini- tive role in advancement of THz technology. In this article we present a design procedure to obtain voltage-dependent carrier density control in a GaN-based heterostructure with a Schottky gate configuration which serves as the substrate for a THz bandpass filter (BPF). The introduced structure consists of a cross shaped metallic layer on the AlGaN/GaN heterostructures. Then, we investigate tuning of transmission properties and the tunability of the filter. An overall tun- ability of about 103 GHz in the resonance frequency was obtained by varying the applied voltage from −8 V to 2 V. Also, a plasmonic metamaterial based on the graphene cross-shaped structure is studied and a comparison has been performed between the optical properties of graphene-based cross-shaped structure and the original structure.

Citation

Hamed Baghban, M. Bana Kermani, M. Khodaee, and Amin Nasiri, "Metamaterial Terahertz Bandpass Filters: A Comparison between Metallic and Graphene-based Structures," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)1472-1474

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