PhotonIcs and Electromagnetics Research Symposium,
also known as Progress In Electromagnetics Research Symposium
PIERS Proceedings
PIER Journals
Published by The Electromagnetics Academy
Published: 2015-08-28
Through-Silicon-Via Pairs Modelling via Compressed Sensing
By
Boping Wu,
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    Boping Wu

    HuaWei Technologies, China

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Jun Fan,
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    Jun Fan

    Missouri University of Science and Technology, USA

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Yiyu Shi,
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    Yiyu Shi

    Missouri University of Science and Technology, USA

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Tao Wang
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    Tao Wang

    Missouri University of Science and Technology, USA

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Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2496-2501
Abstract
Through-Silicon-Vias (TSVs) are the critical enabling technique for three-dimensional integrated circuits (3D ICs). While there are a few existing works in literature to model the elec- trical performance of TSVs, they are either for fixed geometry or in lack of accuracy. In this paper, we use compressed sensing technique to model the electrical performance of TSV pairs. Experimental results indicate that with an exceptionally small number of samples, our model has a maximum relative error of 3.70% compared with full-wave simulations over a wide range of geometry parameters and frequencies.
Citation
Boping Wu, Jun Fan, Yiyu Shi, and Tao Wang, "Through-Silicon-Via Pairs Modelling via Compressed Sensing," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2496-2501
References

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