PhotonIcs and Electromagnetics Research Symposium,
also known as Progress In Electromagnetics Research Symposium
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Published: 2015-08-28
Bandgap Engineering of InGaAsP/InP Multiple Quantum Well Structure by Dielectric Sputtering
By
Jian-Jun He,
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    Jian-Jun He

    Zhejiang University, China

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Xin Zhang,
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    Xin Zhang

    Zhejiang University, China

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Hongli Zhu,
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    Hongli Zhu

    Zhejiang University, China

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Yuan Zhuang
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    Yuan Zhuang

    Zhejiang University, China

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Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2435-2437
Abstract
This paper investigates a method of Si3 N4 sputtering and annealing on quantum well intermixing for bandgap engineering of InGaAsP/InP multiple quantum well structure. A bandgap blueshift of about 90 nm is obtained. At the same time, the PL peak width becomes narrower, and the intensity is slightly increased. The waveguide losses at the absorption edge of the waveguide with and without QWI are about 27 dB/cm and 39 dB/cm, respectively. The results indicate the good quality of the MQW material after the bandgap engineering by dielectric sputtering and annealing.
Citation
Jian-Jun He, Xin Zhang, Hongli Zhu, and Yuan Zhuang, "Bandgap Engineering of InGaAsP/InP Multiple Quantum Well Structure by Dielectric Sputtering," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2435-2437
References

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