Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9,Page(s)959-962
Abstract
In this paper, we demonstrate a new method of fabricating large-area well-ordered
nano-cones using colloidal lithography and inductively coupled plasma (ICP) dry etching, and
discuss the anti-reflectance performance. In the fabrication, we use SiO2 nano-particles as the
mask. Its selectivity in different reacting gases in ICP can result in different shapes of nanostruc-
tures. Before the etching, we use methanol-assisted self-assembly at the air/water interface to
form the patterns. Different ICP etching recipes are used to form rod-shaped and cone-shaped
nanowires with the same height and period. The resultant nano-cone structures are well-shaped
with smooth side walls. After the fabrication, the anti-reflection performance is measured and
compared, which shows that cone-shaped nanowires can reduce the surface reflection to lower
than 4% over the wavelength range of 400–900 nm, while nano-rods can only keep this value at
approximately 6%. Theoretical simulations are also carried out using Comsol, which confirm that
nano-cones provide better anti-reflectance performance.
Citation
Jian-Jun He,
Yu Hu,
and
Nan Liu,
"Low Reflectance GaAs Nano-cones Fabricated by Colloidal Lithography for Solar Cells," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9,Page(s)959-962