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PhotonIcs and Electromagnetics Research Symposium,
also known as Progress In Electromagnetics Research Symposium

PIERS Proceedings

Published by The Electromagnetics Academy

Published: 2015-08-28

Validation Analysis and Test of Semiconductor Device Simulator GSRES

By

Gong Ding,

Gong Ding

Northwest Institute of Nuclear Technology, China

Yong Li,

Yong Li

Northwest Institute of Nuclear Technology, China

Jianguo Wang,

Jianguo Wang

Northwest Institute of Nuclear Technology, China

Hongfu Xia,

Hongfu Xia

Northwest Institute of Nuclear Technology, China

Haiyan Xie,

Haiyan Xie

Northwest Institute of Nuclear Technology, China

Chun Xuan

Chun Xuan

Northwest Institute of Nuclear Technology, China

Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)1006-1011

Abstract

Basic drift-diffusion model (DDM) of carriers in semiconductor using in a numer- ical simulator: General Semiconductor Radiation Effect Simulator (GSRES), is studied in order to identify and reduce the numerical errors of this semiconductor simulator. Numerical approxi- mations of the semiconductor device EMP effect simulator is analysed. Numerical errors caused by approximation of the field distribution of lattice temperature, and approximation the of the recombination rate and generation rate are studied. Application range of this simulator is anal- ysed according to the numerical errors caused by these approximations. Terms of the simulator that should be improved and enhanced precision are given.

Citation

Gong Ding, Yong Li, Jianguo Wang, Hongfu Xia, Haiyan Xie, and Chun Xuan, "Validation Analysis and Test of Semiconductor Device Simulator GSRES," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)1006-1011

References

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