Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9,Page(s)928-931
Abstract
In this paper, a dual-band push-push voltage-controlled oscillator implemented in
the 0.18-µm CMOS process for V-band applications is presented. By using a forth order resonance
network composed of symmetric inductors and varactors and a push-push topology, the oscillation
frequencies of the proposed circuit can be switched with only one control signal between two
bands. And the second order harmonic is extracted from the central taps of inductors to achieve
the frequencies of two V-band operations. The tuning ranges of the proposed voltage-controlled
oscillator are from 67.78 to 69.42 GHz and from 52.2 to 54.7 GHz, respectively. The measured
phase noise at 1 MHz frequency offset are −86.4 dBc/Hz and −90.5 dBc/Hz for 69.42 GHz and
54.7 GHz output frequencies, while the corresponding phase noises at 10 MHz frequency offset
are −108.4 dBc/Hz and −112 dBc/Hz, respectively. The core circuit consumes a 12.96 mW dc
power from a 1.8-V supply.
Citation
Yu-Hsin Chang,
and
Yen-Chung Chiang,
"A Dual V-band Push-push VCO Using the 0.18 µm CMOS Process Technology," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9,Page(s)928-931