PhotonIcs and Electromagnetics Research Symposium,
also known as Progress In Electromagnetics Research Symposium
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Published: 2015-07-09
Monolithic Integration of GaN-based Light-emitting Diodes and Metal-oxide-semiconductor Field-effect Transistors
By
Pin-Guang Chen,
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    Pin-Guang Chen

    National Taiwan Normal University, Taiwan

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Yung-An Hsieh,
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    Yung-An Hsieh

    National Taiwan Normal University, Taiwan

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Jung-Min Hwang,
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    Jung-Min Hwang

    Industrial Technology Research Institute (ITRI), Taiwan

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Min-Hung Lee,
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    Min-Hung Lee

    National Taiwan Normal University, Taiwan

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Ya-Ju Lee,
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    Ya-Ju Lee

    National Taiwan Normal University, Taiwan

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Ming-Han Liao,
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    Ming-Han Liao

    Deparment of Mechanical Engineering, Taiwan

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Mei-Tan Wang,
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    Mei-Tan Wang

    Industrial Technology Research Institute (ITRI), Taiwan

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Zu-Po Yang,
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    Zu-Po Yang

    National Chiao-Tung University, Taiwan

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Yung-Chi Yao
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    Yung-Chi Yao

    National Taiwan Normal University, Taiwan

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Progress In Electromagnetics Research, Vol. 185, 17-48, 2026
doi:10.2528/PIER26011404
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Abstract
We present a review of homogenization models of microwave wire media with different geometries. We begin with a simple (uniaxial) wire medium and then consider more complex types of wire media - double, triple, and interlaced wire media - which remain underexplored. We discuss boundary problems with wire media and the most important physical effects revealed using the reviewed homogenization models.
Citation
Pin-Guang Chen, Yung-An Hsieh, Jung-Min Hwang, Min-Hung Lee, Ya-Ju Lee, Ming-Han Liao, Mei-Tan Wang, Zu-Po Yang, and Yung-Chi Yao, "Monolithic Integration of GaN-based Light-emitting Diodes and Metal-oxide-semiconductor Field-effect Transistors," Proceedings of 2026 Photonics & Electromagnetics Research Symposium, Suzhou, China, 27 - 31 July
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