paper 150305101220

Abstract

The technology of synthesis of InAlAs layers lattice matched to InP by the molec- ular beam epitaxy technique and the details of pre-epitaxial substrate treatments are considered in this work. We find that with the arsenic beam equivalent pressure of 5×10−5 Torr used the optimal structural parameters and luminescent properties were achieved with the substrate temperature to 520◦ C.

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Dmitriy Vladimirovich Dmitriev

E. V. Fedosenko

A. M. Gilinsky

A. I. Toropov

K. S. Zhuravlev