This paper presents a RF MEMS (Radio Frequency Microelectromechanical Sys- tem) switch which is capable of handling high power. By optimizing the design of its contact configuration and cantilever structure, the RF current distribution becomes more uniform through each contact of the multi-contact switch. The novel design of micro-spring cantilever structure also ensures a good contact between the contacts and top electrode when the switch is in the “on” state. The simulation results demonstrate the RF MEMS switch has excellent microwave performance: insertion loss < 0.15 dB, return loss > 31.6 dB and isolation > 14.5 dB from DC to 40 GHz as well as the ability of handling 3.1 W RF power which means a 300% improvement in power handling capability compared with traditional cantilever switch.