PhotonIcs and Electromagnetics Research Symposium,
also known as Progress In Electromagnetics Research Symposium
PIERS Proceedings
PIER Journals
Published by The Electromagnetics Academy
Published: 2015-08-28
Design and Simulation of 450 nm GaN-based Multiple-quantum-well Tunable V-cavity Laser
By
Jian-Jun He,
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    Jian-Jun He

    Zhejiang University, China

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Zhipeng Hu,
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    Zhipeng Hu

    Zhejiang University, China

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Jianjun Meng,
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    Jianjun Meng

    Zhejiang University, China

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Lin Wu
Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2441-2444
Abstract
We present the design and simulation of a 450 nm GaN-based V-cavity tunable laser without grating and epitaxial regrowth. Quantum well structure has been optimized to realize good optical confinement. The simulation results show that 20 channels with 300 GHz spacing can be achieved, with a tuning range of 4.1 nm and high high side-mode suppression ratio (SMSR) over 30 dB.
Citation
Jian-Jun He, Zhipeng Hu, Jianjun Meng, and Lin Wu, "Design and Simulation of 450 nm GaN-based Multiple-quantum-well Tunable V-cavity Laser," Proceedings of 2015 Photonics & Electromagnetics Research Symposium, Prague, July 6 - 9，Page(s)2441-2444
References

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